smd type transistors features high current capacitance. low collector saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6v collector current i c 5a collector current (pulse) * i cp 8a base current i b 0.2 a base current (pulse) * i bp 0.4 a total power dissipation p t 2w junction temperature t j 150 storage temperature t stg -55to+150 *pw 10 ms, duty cycle 50 % sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SD2402 smd type transistors smd type transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =50v,i e =0 100 na emitter cutoff current i ebo v eb =6.0v,i c =0 100 na h fe 1v ce =1.0v,i c =1.0 a 80 h fe 2v ce =1.0v,i c = 2.0 a 100 200 400 base to emitter voltage * v be v ce =1.0v,i c = 0.1 a 600 650 700 mv v ce(sat) 1 i c =3v,i b = 0.15 a 140 300 mv v ce(sat) 2 i c =5v,i b = 0.25 a 230 500 mv base saturation voltage v be(sat) i c =3v,i b = 0.15 a 0.88 1.2 v gain bandwidth product f t v ce =10v,i e =-0.5a 170 mhz output capacitance c ob v cb =10v,i e = 0 , f = 1.0 mhz 60 pf turn-on time t on 275 ns storage time t stg 485 ns fall time t f 45 ns dc current gain * collector saturation voltage i c =2.0a,v cc =10v i b1 =-i b2 =0.1a r l =500 h fe classification marking ex ey ez hfe 100 200 160 320 200 400 2SD2402 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors product specification 4008-318-123
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